IGW25N120H3

Overview

1200 V, 25 A IGBT Discrete in TO-247 package

1200 V, 25 A single HighSpeed 3 H3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features

  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz
  • Low switching losses for high efficiency
  • Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Offering Tj(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom

Benefits

  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 1200 V IGBT efficiency and EMI behavior
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